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byAK and the research community

Aug 20

Curriculum reinforcement learning for quantum architecture search under hardware errors

The key challenge in the noisy intermediate-scale quantum era is finding useful circuits compatible with current device limitations. Variational quantum algorithms (VQAs) offer a potential solution by fixing the circuit architecture and optimizing individual gate parameters in an external loop. However, parameter optimization can become intractable, and the overall performance of the algorithm depends heavily on the initially chosen circuit architecture. Several quantum architecture search (QAS) algorithms have been developed to design useful circuit architectures automatically. In the case of parameter optimization alone, noise effects have been observed to dramatically influence the performance of the optimizer and final outcomes, which is a key line of study. However, the effects of noise on the architecture search, which could be just as critical, are poorly understood. This work addresses this gap by introducing a curriculum-based reinforcement learning QAS (CRLQAS) algorithm designed to tackle challenges in realistic VQA deployment. The algorithm incorporates (i) a 3D architecture encoding and restrictions on environment dynamics to explore the search space of possible circuits efficiently, (ii) an episode halting scheme to steer the agent to find shorter circuits, and (iii) a novel variant of simultaneous perturbation stochastic approximation as an optimizer for faster convergence. To facilitate studies, we developed an optimized simulator for our algorithm, significantly improving computational efficiency in simulating noisy quantum circuits by employing the Pauli-transfer matrix formalism in the Pauli-Liouville basis. Numerical experiments focusing on quantum chemistry tasks demonstrate that CRLQAS outperforms existing QAS algorithms across several metrics in both noiseless and noisy environments.

Entanglement Purification in Quantum Networks: Guaranteed Improvement and Optimal Time

While the concept of entanglement purification protocols (EPPs) is straightforward, the integration of EPPs in network architectures requires careful performance evaluations and optimizations that take into account realistic conditions and imperfections, especially probabilistic entanglement generation and quantum memory decoherence. It is important to understand what is guaranteed to be improved from successful EPP with arbitrary non-identical input, which determines whether we want to perform the EPP at all. When successful EPP can offer improvement, the time to perform the EPP should also be optimized to maximize the improvement. In this work, we study the guaranteed improvement and optimal time for the CNOT-based recurrence EPP, previously shown to be optimal in various scenarios. We firstly prove guaranteed improvement for multiple figures of merit, including fidelity and several entanglement measures when compared to practical baselines as functions of input states. However, it is noteworthy that the guaranteed improvement we prove does not imply the universality of the EPP as introduced in arXiv:2407.21760. Then we prove robust, parameter-independent optimal time for typical error models and figures of merit. We further explore memory decoherence described by continuous-time Pauli channels, and demonstrate the phenomenon of optimal time transition when the memory decoherence error pattern changes. Our work deepens the understanding of EPP performance in realistic scenarios and offers insights into optimizing quantum networks that integrate EPPs.

Detecting Fermi Surface Nesting Effect for Fermionic Dicke Transition by Trap Induced Localization

Recently, the statistical effect of fermionic superradiance is approved by series of experiments both in free space and in a cavity. The Pauli blocking effect can be visualized by a 1/2 scaling of Dicke transition critical pumping strength against particle number Nat for fermions in a trap. However, the Fermi surface nesting effect, which manifests the enhancement of superradiance by Fermi statistics is still very hard to be identified. Here we studied the influence of localized fermions on the trap edge when both pumping optical lattice and the trap are presented. We find due to localization, the statistical effect in superradiant transition is enhanced. Two new scalings of critical pumping strength are observed as 4/3, and 2/3 for mediate particle number, and the Pauli blocking scaling 1/3 (2d case) in large particle number limit is unaffected. Further, we find the 4/3 scaling is subject to a power law increasing with rising ratio between recoil energy and trap frequency in pumping laser direction. The divergence of this scaling of critical pumping strength against N_{rm at} in E_R/omega_xrightarrow+infty limit can be identified as the Fermi surface nesting effect. Thus we find a practical experimental scheme for visualizing the long-desired Fermi surface nesting effect with the help of trap induced localization in a two-dimensional Fermi gas in a cavity.

Precision measurement of the last bound states in H_2 and determination of the H + H scattering length

The binding energies of the five bound rotational levels J=0-4 in the highest vibrational level v=14 in the X^1Sigma_g^+ ground electronic state of H_2 were measured in a three-step ultraviolet-laser experiment. Two-photon UV-photolysis of H_2S produced population in these high-lying bound states, that were subsequently interrogated at high precision via Doppler-free spectroscopy of the F^1Sigma_g^+ - X^1Sigma_g^+ system. A third UV-laser was used for detection through auto-ionizing resonances. The experimentally determined binding energies were found to be in excellent agreement with calculations based on non-adiabatic perturbation theory, also including relativistic and quantum electrodynamical contributions. The s-wave scattering length of the H + H system is derived from the binding energy of the last bound J=0 level via a direct semi-empirical approach, yielding a value of a_s = 0.2724(5) a_0, in good agreement with a result from a previously followed theoretical approach. The subtle effect of the malpha^4 relativity contribution to a_s was found to be significant. In a similar manner a value for the p-wave scattering volume is determined via the J=1 binding energy yielding a_p = -134.0000(6) a_0^3. The binding energy of the last bound state in H_2, the (v=14, J=4) level, is determined at 0.023(4) cm^{-1}, in good agreement with calculation. The effect of the hyperfine substructure caused by the two hydrogen atoms at large internuclear separation, giving rise to three distinct dissociation limits, is discussed.

Creation of single vacancies in hBN with electron irradiation

Understanding electron irradiation effects is vital not only for reliable transmission electron microscopy characterization, but increasingly also for the controlled manipulation of two-dimensional materials. The displacement cross sections of monolayer hBN are measured using aberration-corrected scanning transmission electron microscopy in near ultra-high vacuum at primary beam energies between 50 and 90 keV. Damage rates below 80 keV are up to three orders of magnitude lower than previously measured at edges under poorer residual vacuum conditions where chemical etching appears to have been dominant. Notably, is possible to create single vacancies in hBN using electron irradiation, with boron almost twice as likely as nitrogen to be ejected below 80 keV. Moreover, any damage at such low energies cannot be explained by elastic knock-on, even when accounting for vibrations of the atoms. A theoretical description is developed to account for lowering of the displacement threshold due to valence ionization resulting from inelastic scattering of probe electrons, modelled using charge-constrained density functional theory molecular dynamics. Although significant reductions are found depending on the constrained charge, quantitative predictions for realistic ionization states are currently not possible. Nonetheless, there is potential for defect-engineering of hBN at the level of single vacancies using electron irradiation.